Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching
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چکیده
منابع مشابه
Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2011
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3565971